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Bulletin of Pure and Applied Sciences- Physics (Started in 1982)
eISSN: 2320-3218
pISSN: 0970-6569
Impact Factor: 6.987 (2018)
DOI: 10.5958/2320-3218
Editor-in-Chief:  Prof. Madan jee,
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Article Details

Bulletin of Pure and Applied Sciences- Physics (Started in 1982)
Year : 2018, Volume & Issue : Volume-37D, Issue-2 (July-December)
Page No. : 33-41, Article Type : Original Aticle
Article DOI : 10.5958/2320-3218.2018.00007.6 (Received on 20.02.2018, Accepted on 16.07.2018)

Double Ionization of Silicon and Phosphorus by Electron-Impact

Santosh Kumar
Author’s Affiliation : Department of Physics, BRA Bihar University, Muzaffarpur, Bihar 842001, India

Corresponding Author : Santosh Kumar Department of Physics, BRA Bihar University, Muzaffarpur, Bihar 842001, India,
E-Mail:-[email protected]


Abstract

I have calculated double ionization cross sections of silicon and phosphorus by electron impact using double binary encounter model. Hartree-Fock momentum distribution has been used for both the ejected electrons during collision process. Contributions from inner shell in the double ionization have been included in the calculations. The results obtained have been found in reasonably good agreement with the experimental observations.

Keywords

Double ionization, Electron impact, Shake off process, One step process, Two step process
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