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Bulletin of Pure and Applied Sciences- Physics (Started in 1982)
eISSN: 2320-3218
pISSN: 0970-6569
Impact Factor: 6.987 (2018)
DOI: 10.5958/2320-3218
Editor-in-Chief: Prof. Madan jee,
About Journal More Archive Visit IndianJournals.com

Current Issue

Double Ionization of Silicon and Phosphorus by Electron-Impact

Santosh Kumar
Author’s Affiliation : Department of Physics, BRA Bihar University, Muzaffarpur, Bihar 842001, India

Corresponding Author : Santosh Kumar Department of Physics, BRA Bihar University, Muzaffarpur, Bihar 842001, India,
E-Mail:-[email protected]

Abstract

I have calculated double ionization cross sections of silicon and phosphorus by electron impact using double binary encounter model. Hartree-Fock momentum distribution has been used for both the ejected electrons during collision process. Contributions from inner shell in the double ionization have been included in the calculations. The results obtained have been found in reasonably good agreement with the experimental observations.

Keywords

Double ionization, Electron impact, Shake off process, One step process, Two step process

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