Transmission Electron Microscopy Studies of Pure Wurtzite Gallium Arsenide and Zinc Blende Gallium Arsenide Nanowires Using Recombination Process

Abstract

The transmission electron microscopy studies of pure Wurtzite Gallium Arsenide and Zinc blende Gallium Arsenide was made. The nanowires contain one Wurtzite segment and one Zinc blende segment and have sharp interfaces between the two segments. The nanowires are coupled to increase the luminescence yield. We have studied the nanowire using both photo-luminescence and transmission electron microscopy in order to correlate the structural and optical properties. A valence band offset of about 90-100 mev was found using the energy range over which peaks shifted. We have found that the band gap of Wurtzite Gallium Arsenide and Zinc Blende Gallium Arsenide were very close to each other both in Cathodo luminescence on the heterojunction samples and in photoluminescence on the control samples. Wurtzite Gallium Arsenide emitted much less than Zinc blende Gallium Arsenide, despite belonging to the same nanowire and having been grown under similar conditions. A low density of stacking defects in Wurtzite Gallium Arsenide did not affect the photoluminescence to any significant degree. The obtained results were found in good agreement with previously obtained results.