Magnetotransport on Two Dimensional Hole Embeded in Carbon Doped Semiconductor Hetero Structure in the Presence of Spin Orbit Intraction

Abstract

We have studied the magnetotransport on two dimensional hole embedded in carbon doped semiconductor hetrojunciton in the presence of spin-orbit interaction. The study of effective masses of  spin orbit split subband in p-type two dimensional hole gases grown along the [001] direction was made. The dependence of intrinsic resistance of long disordered single wall carbon nanotubes was also taken into account for study. The disordered single wall nanotubes form a system for one dimensional localization. This was due to coulomb blockade in a series of   10 nm long quantum dots lying along the tube. The activation energy was found to change as the temperature range was changed. The effective masses in the hole systems are different for two spin split subbands and strongly dependent on sample specific properties such as density and spin orbit interaction strength. This resulted the complexity of the valence band of gallium arsenide. The strong spin orbit splitting in two dimensional hole gas was found due to the presence of a beating in the low field Shubnikov-de Hass oscillations. The heavy-heavy hole effective mass shows a strong density dependence due to spin orbit induced non parabolicities in the valence band. The results were confirmed by self-consistent calculations. In p-type two dimensional hole the contribution to spin orbit interaction of Rashba type originated from the structure inversion asymmetry of the host hetero-structure. Rashba spin orbit interaction for holes have a cubic dependence on the inplane momentum. It was found that effective mass was several times larger than electron in the conduction band. The smaller Fermi energy made the carrier-carrier coulomb interaction more relevant, allowing the study of many body related effects. The obtained results were in good agreement with previously obtained results.