Band Structure of Semiconductor Nanowires with Embeded Quantum Dots

Abstract

The structure of nanowire bands by quantum dots or applying external electrostatic potentials have been studied. The nanostructure gave rise to bound states associated with energy levels within the gap between the valence and conduction bands and to resonances for metastable states and did not exist in the unstructured nanowire. When constant external magnetic fields were applied to the nanostructure the transformation of resonances into bound states were found. The resonance binding presented the transition from resonance to bound states. This type of nanostructure was due to using the effective mass approximation. The energy of the conduction band states behaved like Landau states. The behavior was linear. This was done in the case of one and two electron systems. The binding of resonances was effectively applied in semiconductor nanostructures embedded in nanowires in both cases and electronic quantum dots and material quantum dots. The expressions included played dealing with matching conditions at the interfaces between materials and the proper conversion of operators involved in the calculations to their co-ordinate representation. We have considered a quantum dot embedded on a nanowire. The matching conditions at the interfaces of the materials was taken into account in the p and z ordinates. The inclusion of the spin presented novel scenarios where some states made the transition from bound to resonance states depending on spin. The results found were in good agreement with previously obtained results.