Electronic Band Structure of Bulk Materials of Bismuth Antimony Nanowires

Abstract

We have developed a model for the miniband gap and the related nonparabolic dispersions at the limiting of bismuth antimony. We have used an interactive one dimensional two band model and developed an analytical approximation for this model. We have studied the band edges and electronic phases as a function of grow the orientation, wire diameter and stoichiometry, including the semimetal phases, the indirect semiconductor phases and the direct semiconductor phases. We have found that bulk materials of bismuth antimony and their alloys have the same symmetry with a rhombohedral lattice structure. There are two atoms per unit cell. The trigonal axis with a threefold symmetry, the binary axis with a twofold symmetry and the bisectrix axis form  a natural cartesian coordinate frame. A mirror plane is formed by the trigonal axis and the bisectrix axis which is perpendicular to the binary axis. The band structure does not change notably with temperature.