Short Channel Field Effect Transistors and Effect of Interplay and Backscattering

Abstract

We have studied the operation and properties of field effect transistors and effect of interplay and backscattering. The role of shot noise is important in this study. The shot noise is produced across the potential barrier in channel. There is no relation between barrier crossings with collective behavior during poissonian process. The interaction due to fluctuation during was examined. The transmission probability was studied. The effect of phonons was observed in crossover. The study of electron-phonon scattering was studied. The Pauli exclusion principle was considered for the study of our problem. The effect of interplay between backscattering in channel was studied. The electrostatic interactions for carriers were studied. For the study of electron-electron interaction the fluctuation of current was considered. The cases of silicon transistor and carbon based electron devices were studied. The enhancement and suppression of shot noise were studied. The repulsion of coulomb electron-electron interplay was found. The same was found in the case of electron scattering in the channel. This was due to bias in weak inversion in short channel transistors. The transport was found due to potential barrier by the source having low contact resistance. The approximations were used to obtain transport. The increase of contact resistance produced spectral density and Fano factor.